Heavily doped bases GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy

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作者：

机构：

[1] Alexandre, F.

[2] Benchimol, J.L.

[3] Dangla, J.

[4] Dubon-Chevallier, C.

[5] Amarger, V.

来源：

Alexandre, F. | 1753年 / 26期

关键词：

Semiconducting Gallium Arsenide--Doping - Semiconducting Gallium Compounds--Growth;

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摘要：

The first demonstration of a GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy is reported. A common-emitter current gain of 30 at a current density of 110 A/cm2 is obtained for a beryllium base doping as high as 8 × 1019 cm-3. The base sheet resistance of 140 Ω/ is among the lowest reported values.

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