GaInP/AlInP quantum well structures and double heterostructure lasers grown by molecular beam epitaxy on (100) GaAs

被引：0
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作者：
Hayakawa, Toshiro [1 ]
Takahashi, Kosei [1 ]
Hosoda, Masahiro [1 ]
Yamamoto, Saburo [1 ]
Hijikata, Toshiki [1 ]
机构：
[1] Sharp Corp, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1988年 / 27卷 / 08期
关键词：
Double Heterostructure Laser - Quantum Well Structures;
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