RADIATIVE RECOMBINATION OF InP AND In1 - xGaxP (0 less than x less than 0. 03) EPITAXIAL FILMS GROWN BY GAS-PHASE EPITAXY.

We investigated the radiative recombination of InP and In//1// minus //xGa//xP (0 less than x less than 0. 03) epitaxial films, which were obtained by gas-transport reactions in the Ga-In-AsH//3-HCl-H//2 system near the binary compound InP. Investigations of the defect content and luminescence of gas-phase indium phosphide and In//1// minus //xGa//xP (0 less than x less than 0. 03) epitaxial films have shown that the minimum dislocation density is observed near x equals 0. 01 and that a structural defect, which may be associated with a phosphorus-vacancy-gallium-atom complex at an indium lattice point or a phosphorus-vacancy-interstitial-gallium-atom complex, forms in the 0. 01 less than x less than 0. 03 composition range.