Intraband absorption in Ge/Si self-assembled quantum dots

被引：0

作者：

Boucaud, P. ^{[1
]}

Le Thanh, V. ^{[1
]}

Sauvage, S. ^{[1
]}

Brunhes, T. ^{[1
]}

Fortuna, F. ^{[1
]}

Debarre, D. ^{[1
]}

Bouchier, D. ^{[1
]}

机构：

[1] Universite Paris XI, Orsay, France

来源：

Materials Research Society Symposium - Proceedings | 2000年 / 571卷

关键词：

Carrier mobility - Chemical vapor deposition - Light absorption - Light measurement - Light polarization - Semiconducting germanium - Semiconducting silicon - Semiconductor device structures - Semiconductor growth - Silanes;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Mid-infrared intraband absorption in Ge/Si self-assembled quantum dots is reported. The self-assembled quantum dots are grown by ultra-high-vacuum chemical vapor deposition. The intraband absorption is observed using a photoinduced absorption technique. The mid-infrared absorption, which is in-plane polarized, is maximum around 300 meV. The absorption is attributed to a quantum dot hole transition between bound and continuum states. The absorption cross section is deduced from the saturation of the photoinduced intraband absorption. An in-plane absorption cross section as large as 2 × 10-13 cm2 is measured for one dot plane.

引用

页码：9 / 14

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