Optical characterization of impact ionization in flip-chip-bonded InP-based high electron mobility transistors

被引：0

作者：

Shigekawa, Naotem ^{[1
]}

Furuta, Tomofumi ^{[2
]}

Suemitsu, Tetsuya ^{[1
]}

Umeda, Yohtaro ^{[2
]}

机构：

[1] NTT Science and Core Technology Laboraiory Group, 3-1 Morinosalo-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

[2] 1NTT Photonics Laboratories, 3-1 Morinosalo-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 10期

关键词：

Experimental; (EXP);

D O I：

10.1143/jjap.38.5823

中图分类号：

学科分类号：

摘要：

Impact ionization in flip-chip-bonded InP-based high electron mobility transistors (HEMTs) with 0.1-μm gates is examined by measuring their electroluminescence (EL). We extract quantities proportional to the concentration of impact-ionization-induced holes at the source edge and the impact ionization probability of a single electron for a wide range of bias voltages. The lateral extension of the high-field region at the drain edge, where the impact ionization occurs, is also estimated. Furthermore, the EL signal from each of two neighboring HEMTs separated by 20 μm is clearly resolved in the spatial distribution measurement, which suggests that the present method is also applicable for characterizing individual devices in actual ICs.

引用

页码：5823 / 5828