EXPERIMENTS ON HIGH POWER GaAs SCHOTTKY BARRIER IMPATT DIODES FOR 12 GHz.

被引：0

作者：

Nio, Koichi

Kadoo, Sadayuki

机构：

来源：

NHK Laboratories Note | 1975年 / 184期

关键词：

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

This paper presents experimental results regarding various factors that limit the efficiency and output power of the IMPATT diode as well as theoretical evaluations of the negative resistance and electronic efficiency of the diode.

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