LOW NOISE GaAS FET AMPLIFIERS.

被引：0
|
作者：
Emergy, Frank E.
机构：
来源：
Microwave Journal | 1977年 / 20卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The development and basic design of GaAs FET devices are reviewed. The improved noise performance and wide dynamic range obtained from balanced amplifier using GaAS FETs above 2 GHz are discussed along with increased system applications.
引用
收藏
页码：79 / 82
相关论文
共 50 条
  • [41] ISOLATION AMPLIFIERS.
    Burman, Rod
    New Electronics, 1980, 13 (22):
  • [42] Review of Monolithic Operational Amplifiers. Fundamental Types of Operational Amplifiers.
    Harasimowicz, Jerzy
    Elektronika, 1972, 13 (11): : 464 - 470
  • [43] MAGNETIC AMPLIFIERS.
    Chatterjee, B.
    Students' Journal of the Institution of Electronics and Telecommunication Engineers, 1986, 26 (02): : 43 - 50
  • [44] Low noise metamorphic HEMT devices and amplifiers on GaAs substrates
    Marsh, PF
    Chu, SLG
    Lardizabal, SM
    Leoni, RE
    Kang, S
    Wohlert, R
    Bowlby, AM
    Hoke, WE
    McTaggart, RA
    Whelan, CS
    Lemonias, PJ
    McIntosh, PM
    Kazior, TE
    1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 1999, : 105 - 108
  • [45] LOW-NOISE EPITAXIAL GAAS AVALANCHE DIODE AMPLIFIERS
    KUNO, HJ
    COLLARD, JR
    GOBAT, AR
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (02) : 251 - &
  • [46] Modified derivative superposition method for linearizing FET low-noise amplifiers
    Aparin, V
    Larson, LE
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (02) : 571 - 581
  • [47] Differential Amplifiers.
    Schommartz, G.
    Nachrichtentechnik Elektronik, 1974, 24 (11): : 414 - 417
  • [48] NOISE MEASUREMENTS ON PULSED HIGH-POWER MICROWAVE AMPLIFIERS.
    Riedl, Guenther
    Siemens Forschungs- und Entwicklungsberichte/Siemens Research and Development Reports, 1973, 2 (06): : 327 - 332
  • [49] On the Noise Optimum of FET Broadband Transimpedance Amplifiers
    Saeckinger, Eduard
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2012, 59 (12) : 2881 - 2889
  • [50] ON THE NOISE OPTIMUM OF GIGAHERTZ FET TRANSIMPEDANCE AMPLIFIERS
    ABIDI, AA
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1987, 22 (06) : 1207 - 1209
12345