LOW NOISE GaAS FET AMPLIFIERS.

被引：0

作者：

Emergy, Frank E.

机构：

来源：

Microwave Journal | 1977年 / 20卷 / 06期

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暂无

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学科分类号：

摘要：

The development and basic design of GaAs FET devices are reviewed. The improved noise performance and wide dynamic range obtained from balanced amplifier using GaAS FETs above 2 GHz are discussed along with increased system applications.

引用

页码：79 / 82

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