LOW NOISE GaAS FET AMPLIFIERS.

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作者：
Emergy, Frank E.
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来源：
Microwave Journal | 1977年 / 20卷 / 06期
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摘要：
The development and basic design of GaAs FET devices are reviewed. The improved noise performance and wide dynamic range obtained from balanced amplifier using GaAS FETs above 2 GHz are discussed along with increased system applications.
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页码：79 / 82
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