LOW NOISE GaAS FET AMPLIFIERS.

被引：0
|
作者：
Emergy, Frank E.
机构：
来源：
Microwave Journal | 1977年 / 20卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The development and basic design of GaAs FET devices are reviewed. The improved noise performance and wide dynamic range obtained from balanced amplifier using GaAS FETs above 2 GHz are discussed along with increased system applications.
引用
收藏
页码：79 / 82
相关论文
共 50 条
  • [1] LOW NOISE GaAs FET AMPLIFIERS.
    Fukuda, Sachiro
    Ara, Youichi
    Haga, Isao
    NEC Research and Development, 1978, (48): : 67 - 78
  • [2] LOW-NOISE GAAS FET AMPLIFIERS
    FUKUDA, S
    ARA, Y
    HAGA, I
    NEC RESEARCH & DEVELOPMENT, 1978, (48): : 67 - 78
  • [3] DESIGN OF LOW NOISE AMPLIFIERS.
    Riordan, R.H.S.
    1972, 33 (08): : 382 - 392
  • [4] MONOLITHIC LOW NOISE AMPLIFIERS.
    Maki, D.W.
    Esfandiari, R.
    Siracusa, M.
    Microwave journal, 1981, 24 (10): : 103 - 106
  • [5] MM-WAVE MONOLITHIC GaAs POWER FET AMPLIFIERS.
    Kim, B.
    Macksey, H.M.
    Tserng, H.Q.
    Shih, H.D.
    Camilleri, N.
    Microwave journal, 1987, 30 (03): : 153 - 164
  • [6] STABILITY OF FET POWER AMPLIFIERS.
    Zavrazhnov, Yu.V.
    Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 1983, 37-38 (06): : 90 - 92
  • [7] BI FET/TRIM FET OPERATIONAL AMPLIFIERS.
    Marty, C.
    Electronic Engineering (London), 1980, 52 (639): : 109 - 127
  • [8] NOISE PERFORMANCE OF MICROWAVE GAAS FET AMPLIFIERS AT LOW-TEMPERATURES
    MILLER, RE
    PHILLIPS, TG
    IGLESIAS, DE
    KNERR, RH
    ELECTRONICS LETTERS, 1977, 13 (01) : 10 - 11
  • [9] COMPUTER SIMULATION TO AID IN THE DESIGN OF MICROWAVE GaAs FET LIMITING AMPLIFIERS.
    Raffaelli, Lamberto
    Microwave journal, 1987, 30 (05): : 317 - 318
  • [10] Low Noise S-Band Amplifiers.
    Zapata Ferrer, J.
    Mosig Perez, J.R.
    Gonzalez Mene, F.
    1600, (19):
12345