Physical models for strained and relaxed GaInAs alloys: Band structure and low-field transport
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Technical Univ of Vienna, Vienna, Austria
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Technical Univ of Vienna, Vienna, Austria
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来源:
Solid State Electron
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8卷
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1139-1152期
关键词:
Band structure - Computer simulation - Electron transport properties - Epitaxial growth - Monte Carlo methods - Semiconducting gallium arsenide - Semiconducting indium compounds;