THREE-SECTION MODEL FOR COMPUTING I-V CHARACTERISTICS OF GaAs MESFETS.

被引：0

作者：

Ki, Hyeon Cheol ^{[1
]}

Son, Sang Hee ^{[1
]}

Park, Kwangmean ^{[1
]}

Kwack, Kae Dal ^{[1
]}

机构：

[1] Hanyang Univ, Seoul, South Korea, Hanyang Univ, Seoul, South Korea

来源：

IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 09期

关键词：

I-V CHARACTERISTIC - PINCHOFF VOLTAGE DEVICES;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A novel model of GaAs MESFETs is proposed by dividing the MESFET into three sections that may be replaced with the resistance (R//2) and the voltage-dependent current sources I//1 and I//3. In order to show the general fitness of this model, two different real devices with low and high pinchoff voltages, respectively, are simulated. The results obtained from the simulation are compared with those of the complete velocity saturation model and the square-law model, as well as experimental data. The results of this model agree better with the experimental data than those of the other two models, i. e. , the complete velocity saturation model and the square-law model.

引用

页码：1929 / 1933

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