GaAs/AlGaAs buried heterostructure laser by wet etching and semi-insulating GaInP:Fe regrowth

被引：8

作者：

Barrios, C. Angulo ^{[1
]}

Messmer, E. Rodríguez ^{[1
]}

Holmgren, M. ^{[2
]}

Lourdudoss, S. ^{[1
]}

机构：

[1] Department of Electronics, Lab. of Semiconductor Materials, Royal Institute of Technology, S-164 40 Kista, Sweden

[2] Spectra Precision AB, Rinkebyv, SE-182 11 Danderyd, Sweden

来源：

| 2000年 / IEEE, Pennington, NJ, United States卷 / 03期

关键词：

Current voltage characteristics - Etching - Heterojunctions - Leakage currents - Light emission - Semiconducting aluminum compounds - Semiconducting gallium arsenide - Semiconducting gallium compounds - Semiconductor device manufacture - Semiconductor growth - Thermal effects - Vapor phase epitaxy;

D O I：

10.1149/1.1391173

中图分类号：

学科分类号：

摘要：

Selective regrowth of semi-insulating Ga0.51In0.49P:Fe (SI-GaInP:Fe) by hydride vapor-phase epitaxy around Al-containing wet etched laser mesas is used for the first time to fabricate a GaAs/AlGaAs buried heterostructure laser emitting at 808 nm. The reverse and forward current-voltage characteristics measured at different temperatures up to 80°C indicate no serious leakage current problems. The performance of the laser shows that the SI-GaInP:Fe burying layer fulfills its function as a current and optical confinement layer. The fabrication procedure and the laser characteristics are presented.

引用