Single-electron memory

被引：0
|
作者：
Nakazato, K.
Blaikie, R.J.
Ahmed, H.
机构：
来源：
Journal of Applied Physics | 1994年 / 75卷 / 10 pt 1期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Future Memory Devices - from Stacked memory, Gain memory, Single-electron memory to Molecular memory
    Nakazato, Kazuo
    2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS, 2006, : 28 - 29
  • [22] Memory effect in an aluminum single-electron floating-node memory cell
    Kim, J
    Oh, S
    Yoo, KH
    Park, JW
    Lee, JO
    Choi, JB
    Park, SI
    Kim, JJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (08): : 4826 - 4829
  • [23] Engineering variations: Towards practical single-electron (few-electron) memory
    Ishii, T
    Osabe, T
    Mine, T
    Murai, F
    Yano, K
    INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 305 - 308
  • [24] Modeling and simulation of single-electron Multi Tunnel Junction Memory
    Le Royer, C.
    Le Carval, G.
    Sanquer, M.
    Fraboulet, D.
    ICCN 2002: INTERNATIONAL CONFERENCE ON COMPUTATIONAL NANOSCIENCE AND NANOTECHNOLOGY, 2002, : 205 - 208
  • [25] Single-electron transistors and memory cells with Au colloidal islands
    Wu, CS
    Chen, CD
    Shih, SM
    Su, WF
    APPLIED PHYSICS LETTERS, 2002, 81 (24) : 4595 - 4597
  • [26] Coulomb blockade three-valued single-electron memory
    Sun, JP
    Wang, TH
    ACTA PHYSICA SINICA, 2003, 52 (10) : 2563 - 2568
  • [27] Static and Dynamic Modeling of Single-Electron Memory for Circuit Simulation
    Xuan, Wei
    Beaumont, Arnaud
    Guilmain, Marc
    Bounouar, Mohamed-Amine
    Baboux, Nicolas
    Etzkorn, James
    Drouin, Dominique
    Calmon, Francis
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (01) : 212 - 220
  • [28] Aluminum single-electron nonvolatile floating gate memory cell
    Chen, CD
    Nakamura, Y
    Tsai, JS
    APPLIED PHYSICS LETTERS, 1997, 71 (14) : 2038 - 2040
  • [29] Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell
    Schaal, S.
    Barraud, S.
    Morton, J. J. L.
    Gonzalez-Zalba, M. F.
    PHYSICAL REVIEW APPLIED, 2018, 9 (05):
  • [30] Single-electron memory for giga-to-tera bit storage
    Yano, K
    Ishii, T
    Sano, T
    Mine, T
    Murai, F
    Hashimoto, T
    Kobayashi, T
    Kure, T
    Seki, K
    PROCEEDINGS OF THE IEEE, 1999, 87 (04) : 633 - 651
12345