共 50 条
- [31] Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 877 - 880
- [32] Excess leakage currents in high-voltage 4H-SiC Schottky diodes Semiconductors, 2010, 44 : 653 - 656
- [34] High-voltage pulse instabilities in SiC Schottky diodes with implanted resistive edge terminations SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1157 - 1160
- [38] “Ideal” static breakdown in high-voltage (1 kV) 4H-SiCp-n junction diodes with guard ring termination Semiconductors, 2005, 39 : 1426 - 1428