Guard-Ring Termination for High-Voltage SiC Schottky Barrier Diodes

被引:0
|
作者
机构
来源
Fuji Electric Review | / 42卷 / 174期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
    Ivanov, P. A.
    Grekhov, I. V.
    Potapov, A. S.
    Il'inskaya, N. D.
    Kon'kov, O. I.
    Samsonova, T. P.
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 877 - 880
  • [32] Excess leakage currents in high-voltage 4H-SiC Schottky diodes
    P. A. Ivanov
    I. V. Grekhov
    A. S. Potapov
    T. P. Samsonova
    N. D. Il’inskaya
    O. I. Kon’kov
    O. Yu. Serebrennikova
    Semiconductors, 2010, 44 : 653 - 656
  • [33] Excess leakage currents in high-voltage 4H-SiC Schottky diodes
    Ivanov, P. A.
    Grekhov, I. V.
    Potapov, A. S.
    Samsonova, T. P.
    Il'inskaya, N. D.
    Kon'kov, O. I.
    Serebrennikova, O. Yu.
    SEMICONDUCTORS, 2010, 44 (05) : 653 - 656
  • [34] High-voltage pulse instabilities in SiC Schottky diodes with implanted resistive edge terminations
    Morisette, DT
    Cooper, JA
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1157 - 1160
  • [35] Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes
    Tang Cen
    Xie Gang
    Zhang Li
    Guo Qing
    Wang Tao
    Sheng Kuang
    CHINESE PHYSICS B, 2013, 22 (10)
  • [36] BREAKDOWN VOLTAGE OF HIGH-VOLTAGE GAAS SCHOTTKY DIODES - COMMENT
    HORVATH, ZJ
    SOLID-STATE ELECTRONICS, 1995, 38 (10) : 1835 - 1836
  • [37] SILICON-CARBIDE HIGH-VOLTAGE (400 V) SCHOTTKY-BARRIER DIODES
    BHATNAGAR, M
    MCLARTY, PK
    BALIGA, BJ
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (10) : 501 - 503
  • [38] “Ideal” static breakdown in high-voltage (1 kV) 4H-SiCp-n junction diodes with guard ring termination
    P. A. Ivanov
    I. V. Grekhov
    N. D. Il’inskaya
    T. P. Samsonova
    Semiconductors, 2005, 39 : 1426 - 1428
  • [39] Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes
    汤岑
    谢刚
    张丽
    郭清
    汪涛
    盛况
    Chinese Physics B, 2013, 22 (10) : 410 - 415
  • [40] HIGH-VOLTAGE (GREATER-THAN 1-KV) SIC SCHOTTKY-BARRIER DIODES WITH LOW ON-RESISTANCES
    KIMOTO, T
    URUSHIDANI, T
    KOBAYASHI, S
    MATSUNAMI, H
    IEEE ELECTRON DEVICE LETTERS, 1993, 14 (12) : 548 - 550