Impact of reductive N2/H2 plasma on porous low-dielectric constant SiCOH thin films

被引：0
|
作者：
Cui, Hao [1 ]
Carter, Richard J. [1 ]
Moore, Darren L. [1 ]
Peng, Hua-Gen [2 ]
Gidley, David W. [2 ]
Burke, Peter A. [1 ]
机构：
[1] LSI Logic Corporation, 23400 NE Glisan Street, Gresham, OR 97030, United States
[2] Department of Physics, University of Michigan, Ann Arbor, MI 48109, United States
来源：
Journal of Applied Physics | 2005年 / 97卷 / 11期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
19
引用
收藏
相关论文
共 50 条
  • [1] Impact of reductive N2/H2 plasma on porous low-dielectric constant SiCOH thin films -: art. no. 113302
    Cui, H
    Carter, RJ
    Moore, DL
    Peng, HG
    Gidley, DW
    Burke, PA
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)
  • [2] Effect of NH3/N2 ratio in plasma treatment on porous low dielectric constant SiCOH materials
    Huang, Jun-Fu
    Bo, Tain-Cih
    Chang, Wei-Yuan
    Chang, Yu-Min
    Leu, Jihperng
    Cheng, Yi-Lung
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 32 (03):
  • [3] Effects of He (90%)/H2 (10%) plasma treatment on electric properties of low dielectric constant SiCOH films
    Kim, Hoonbae
    Ha, Myung Hoon
    Jung, Donggeun
    Chae, Heeyeop
    Kim, Hyoungsub
    MATERIALS RESEARCH BULLETIN, 2012, 47 (10) : 3008 - 3010
  • [4] Characteristics of Plasma Polymerized Low-dielectric Constant SiCOH Films Deposited with Tetrakis(trimethylsilyloxy)silane and Cyclohexane Precursors
    Kim, Hoonbae
    Oh, Hyojin
    Lee, Chaemin
    Jung, Donggeun
    Boo, Jin-Hyo
    BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 2014, 35 (10) : 2941 - 2944
  • [5] Effect of H2/He plasma treatment on porous low dielectric constant materials
    Cheng, Yi-Lung
    Haung, Chiao-Wei
    Hung, Wei-Jie
    Sun, Chung-Ren
    Lee, Wen-Hsi
    SURFACE & COATINGS TECHNOLOGY, 2016, 308 : 182 - 188
  • [6] Remote plasma-enhanced chemical vapor deposition of nanoporous low-dielectric constant SiCOH films using vinyltrimethylsilane
    Park, JM
    Rhee, SW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (08) : F92 - F97
  • [7] Impact of plasma treatment on structure and electrical properties of porous low dielectric constant SiCOH material
    Cheng, Yi-Lung
    Huang, Jun-Fu
    Chang, Yu-Min
    Leu, Jihperng
    THIN SOLID FILMS, 2013, 544 : 537 - 540
  • [8] H2/N2 plasma damage on porous dielectric SiOCH film evaluated by in situ film characterization and plasma diagnostics
    Yamamoto, Hiroshi
    Takeda, Keigo
    Ishikawa, Kenji
    Ito, Masafumi
    Sekine, Makoto
    Hori, Masaru
    Kaminatsui, Takeshi
    Hayashi, Hisataka
    Sakai, Itsuko
    Ohiwa, Tokuhisa
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (08)
  • [9] Effects of H2 plasma treatment on low dielectric constant methylsilsesquioxane
    Chang, TC
    Liu, PT
    Mei, YJ
    Mor, YS
    Perng, TH
    Yang, YL
    Sze, SM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (05): : 2325 - 2330
  • [10] Characterization of flexible low-dielectric constant carbon-doped oxide (SiCOH) thin films under repeated mechanical bending stress
    William Wirth
    Jacob Comeaux
    Seonhee Jang
    Journal of Materials Science, 2022, 57 : 21411 - 21431
12345