Relation of IGBT peak rate of decrease of anode current at turn-off with current and junction temperature

被引：0

作者：

Li, Shan ^{[1
]}

Ji, Lingyun ^{[1
]}

Yan, Shuying ^{[1
]}

机构：

[1] Tianjin Univ, Tianjin, China

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 1999年 / 19卷 / 07期

关键词：

Field effect transistors - Semiconductor junctions;

D O I：

暂无

中图分类号：

TN3 [半导体技术]; TN4 [微电子学、集成电路（IC）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ; 1401 ;

摘要：

The relation between current and IGBT peak rate of decrease of anode current at turn-off was studied emphatically. On this basis, a method of using the peak rate of decrease of anode current to measure the junction temperature was proposed. The relation between the occurring time of the peak rate of decrease of anode current at turn-off and the over-current state was analyzed, and δt was defined as a characteristic parameter to determine IGBT over current state.

引用

页码：33 / 37