USE OF THE POSITRON-ANNIHILATION METHOD TO STUDY THIN SURFACE LAYERS.

被引：0
|
作者：
Pogrebnyak, A.D.
Kuz'minykh, V.A.
Aref'ev, K.P.
机构：
来源：
Soviet physics. Technical physics | 1981年 / 26卷 / 09期
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Compendex;
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摘要：
SEMICONDUCTOR MATERIALS
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页码：1128 / 1130
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