TEMPERATURE TRANSIENTS OF ION-IMPLANTED SILICON WAFERS DURING RAPID THERMAL ANNEALING.

被引：0

作者：

Uoochi, Yasuo ^{[1
]}

Shioya, Yoshimi ^{[1
]}

Maeda, Mamoru ^{[1
]}

机构：

[1] Fujitsu Ltd, Kawasaki, Jpn, Fujitsu Ltd, Kawasaki, Jpn

来源：

Journal of the Electrochemical Society | 1987年 / 134卷 / 08期

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D O I：

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摘要：

引用

页码：2007 / 2010

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[1] TEMPERATURE TRANSIENTS OF ION-IMPLANTED SILICON-WAFERS DURING RAPID THERMAL ANNEALING
UOOCHI, Y
SHIOYA, Y
MAEDA, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) : 2007 - 2010
[2] INTRODUCTION OF DEFECTS IN ION-IMPLANTED SILICON DURING LASER ANNEALING.
Bao Ximao
Hang Xinfan
Guo He
Zhang Mei
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1983, 4 (06): : 596 - 600
[3] SENSITIVITY ANALYSIS OF ION-IMPLANTED SILICON-WAFERS AFTER RAPID THERMAL ANNEALING
KIM, YT
JUN, CH
BAEK, JT
YOO, HJ
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (10) : 1413 - 1417
[4] DIFFUSION OF PHOSPHORUS DURING RAPID THERMAL ANNEALING OF ION-IMPLANTED SILICON
OEHRLEIN, GS
COHEN, SA
SEDGWICK, TO
APPLIED PHYSICS LETTERS, 1984, 45 (04) : 417 - 419
[5] CHARACTERISTICS OF RAPID THERMAL ANNEALING IN ION-IMPLANTED SILICON
HOLLAND, OW
NARAYAN, J
FATHY, D
WILSON, SR
JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) : 905 - 909
[6] Defect behavior in ion-implanted silicon by rapid thermal annealing
Xu, Li
Qian, Peixin
Li, Zhijian
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1993, 14 (08): : 513 - 516
[7] RAPID THERMAL ANNEALING OF ION-IMPLANTED SEMICONDUCTORS
NARAYAN, J
HOLLAND, OW
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2913 - 2921
[8] PULSED THERMAL ANNEALING OF ION-IMPLANTED SILICON
SCOVELL, PD
SPURGIN, EJ
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2413 - 2418
[9] RAPID THERMAL ANNEALING OF ION-IMPLANTED GAAS
SEALY, BJ
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (05) : 448 - 451
[10] RAPID THERMAL ANNEALING OF ION-IMPLANTED CDTE
MEIKLE, SG
THOMPSON, DA
JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (03) : 157 - 161

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