Epitaxial growth and characterization of nitride semiconductors

被引：0
|
作者：
Yoshida, A. [1 ]
机构：
[1] Toyohashi Univ of Technology, Toyohashi, Japan
来源：
Solid State Phenomena | 1997年 / 55卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1 / 6
相关论文
共 50 条
  • [21] Gallium Nitride Epitaxial Growth.
    Jacob, Guy
    1978, 21 (02): : 159 - 165
  • [22] PRODUCTION AND CHARACTERIZATION OF QUANTUM NANOSTRUCTURES OF EPITAXIAL SEMICONDUCTORS
    BERTI, M
    DRIGO, AV
    MAZZER, M
    CAMPORESE, A
    TORZO, G
    ROSSETTO, G
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C5): : 1157 - 1163
  • [23] Production and characterization of quantum nanostructures of epitaxial semiconductors
    J Phy, 6 (C5-1157):
  • [24] EPITAXIAL-GROWTH OF SEMICONDUCTORS ON CRYSTALLINE INSULATORS
    FURUKAWA, S
    ISHIWARA, H
    ASANO, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C96 - C96
  • [25] EPITAXIAL TECHNOLOGIES IN THE GROWTH OF SEMICONDUCTORS FOR DEVICE APPLICATIONS
    FRANCHI, S
    MARGADONNA, D
    PELOSI, C
    MATERIALS CHEMISTRY, 1979, 4 (03): : 529 - 547
  • [26] The growth of epitaxial aluminium on As containing compound semiconductors
    Pilkington, SJ
    Missous, M
    JOURNAL OF CRYSTAL GROWTH, 1999, 196 (01) : 1 - 12
  • [27] Review of recent efforts on the growth and characterization of nitride-based diluted magnetic semiconductors
    Kane, Matthew H.
    Strassburg, Martin
    Asghar, Ali
    Li, Nola
    Fenwick, Will
    Ferguson, Ian T.
    GALLIUM NITRIDE MATERIALS AND DEVICES, 2006, 6121
  • [28] Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization
    Davis, RF
    Gehrke, T
    Linthicum, KJ
    Zheleva, TS
    Preble, EA
    Rajagopal, P
    Zorman, CA
    Mehregany, M
    JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) : 134 - 140
  • [29] Molecular-beam epitaxial growth and characterization of quaternary III-nitride compounds
    Monroy, E
    Gogneau, N
    Enjalbert, F
    Fossard, F
    Jalabert, D
    Bellet-Amalric, E
    Dang, LS
    Daudin, B
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) : 3121 - 3127
  • [30] Renaissance and progress in crystal growth of nitride semiconductors
    Akasaki, I
    JOURNAL OF CRYSTAL GROWTH, 1999, 198 : 885 - 893
12345