Defect behavior in ion-implanted silicon by rapid thermal annealing

被引：0

作者：

Xu, Li ^{[1
]}

Qian, Peixin ^{[1
]}

Li, Zhijian ^{[1
]}

机构：

[1] Peking Univ, Beijing, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1993年 / 14卷 / 08期

关键词：

Annealing - Arsenic - Crystal defects - Ion implantation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A series of rapid thermal annealing (RTA) on defect behavior in high-dose As+-implanted silicon were carried out. RBS with channeling and TEM were used to analyse recovery of implantation induced crystalline damage and secondary defect evolution respectively. On the basis of experimental results, the mechanism of defect control during RTA were comprehensively discussed.

引用

页码：513 / 516

共 50 条

[1] CHARACTERISTICS OF RAPID THERMAL ANNEALING IN ION-IMPLANTED SILICON
HOLLAND, OW
NARAYAN, J
FATHY, D
WILSON, SR
JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) : 905 - 909
[2] DIFFUSION OF PHOSPHORUS DURING RAPID THERMAL ANNEALING OF ION-IMPLANTED SILICON
OEHRLEIN, GS
COHEN, SA
SEDGWICK, TO
APPLIED PHYSICS LETTERS, 1984, 45 (04) : 417 - 419
[3] RAPID THERMAL ANNEALING OF ION-IMPLANTED SEMICONDUCTORS
NARAYAN, J
HOLLAND, OW
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2913 - 2921
[4] PULSED THERMAL ANNEALING OF ION-IMPLANTED SILICON
SCOVELL, PD
SPURGIN, EJ
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2413 - 2418
[5] RAPID THERMAL ANNEALING OF ION-IMPLANTED GAAS
SEALY, BJ
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (05) : 448 - 451
[6] RAPID THERMAL ANNEALING OF ION-IMPLANTED CDTE
MEIKLE, SG
THOMPSON, DA
JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (03) : 157 - 161
[7] ON THE NATURE OF THE DEFECT REVERSE ANNEALING IN ION-IMPLANTED SILICON
DVURECHENSKY, AV
RYAZANTSEV, IA
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 46 (3-4): : 129 - 132
[8] CAPLESS RAPID THERMAL ANNEALING OF SILICON ION-IMPLANTED GALLIUM-ARSENIDE
HARA, T
GELPEY, JC
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (02): : L94 - L96
[9] ELECTRICAL ACTIVATION OF ARSENIC ION-IMPLANTED POLYCRYSTALLINE SILICON BY RAPID THERMAL ANNEALING
WONG, CY
KOMEM, Y
HARRISON, HB
APPLIED PHYSICS LETTERS, 1987, 50 (03) : 146 - 148
[10] ELECTRICAL ACTIVATION BEHAVIOR OF ION-IMPLANTED SILICON IN GALLIUM-ARSENIDE DURING RAPID THERMAL ANNEALING
DESOUZA, JP
SADANA, DK
HOVEL, HJ
ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 495 - 499

← 1 2 3 4 5 →