SWITCHING TIME IN LOW-TEMPERATURE IMPURITY BREAKDOWN IN n-TYPE GaAs.

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Zverev, L.P.
Min'kov, G.M.
Negashev, S.A.
Kruzhaev, V.V.
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| 1600年 / 10期
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Determination of switching times in low-temperature impurity breakdown in epitaxial n-type GaAs films with a carrier density of 3 multiplied by 10**1**4-5 multiplied by 10**1**5 cm** minus **3 at 4. 2 K is described.
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