Plasma-liquid transition in a nonequilibrium electron-hole pair system at a silicon surface
被引:0
作者:
Altukhov, P.D.
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h-index: 0
机构:
USSR Acad of Sciences, RussiaUSSR Acad of Sciences, Russia
Altukhov, P.D.
[1
]
Bakun, A.A.
论文数: 0引用数: 0
h-index: 0
机构:
USSR Acad of Sciences, RussiaUSSR Acad of Sciences, Russia
Bakun, A.A.
[1
]
Rogachev, A.A.
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h-index: 0
机构:
USSR Acad of Sciences, RussiaUSSR Acad of Sciences, Russia
Rogachev, A.A.
[1
]
Rubtsov, G.P.
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h-index: 0
机构:
USSR Acad of Sciences, RussiaUSSR Acad of Sciences, Russia
Rubtsov, G.P.
[1
]
机构:
[1] USSR Acad of Sciences, Russia
来源:
Bulletin of the Academy of Sciences of the U.S.S.R. Physical series
|
1988年
/
52卷
/
03期
关键词:
Electric Conductivity - Liquids - Plasmas - Semiconducting Films;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
Conductivity and recombination-emission measurements have been made on non-equilibrium e-h pairs associated with a [100] hole surface-charge layer in silicon. The surface e-h pair system shows a plasma-liquid transition as the surface charge density decreases.