FACETTED STRUCTURES STUDIED BY LOW ENERGY ELECTRON DIFFRACTION - ITS APPLICATION TO III-V COMPOUND SEMICONDUCTORS.

被引：0

作者：

Chen Ping ^{[1
]}

Hou Xiaoyuan ^{[1
]}

Ding Xunmin ^{[1
]}

Dong Guosheng ^{[1
]}

Yang Shu ^{[1
]}

Wang Xun ^{[1
]}

机构：

[1] Fudan Univ, Inst of Modern Physics,, Shanghai, China, Fudan Univ, Inst of Modern Physics, Shanghai, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1986年 / 7卷 / 01期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - Structural Analysis - SEMICONDUCTING INDIUM COMPOUNDS - Surfaces;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The change of LEED patterns observed from an orderly facetted crystal surface can be utilized to determine the structure of the surface. This paper introduces such an elemental method, as well as its application to polar surfaces of III-V compounds. An analysis based on recently observed behaviors of GaAs(1 OVER BAR 1 OVER BAR 1 OVER BAR ) and InP (1 OVER BAR 1 OVER BAR 1 OVER BAR ) indicating that (110) oriented facets may dominate on these surfaces. A possible model is proposed for the GaAs(1 OVER BAR 1 OVER BAR 1 OVER BAR ) (3 multiplied by 3) reconstruction.

引用

页码：65 / 72