ALTERNATIVES TO FURNACE ANNEALING.

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Iscoff, Ron ^{[1
]}

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[1] Semiconductor Int, Des Plaines, IL,, USA, Semiconductor Int, Des Plaines, IL, USA

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页码：78 / 84

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[1] HIGH CONDUCTIVITY, SHALLOW DOPING IN SILICON BY ION IMPLANTATION AND FURNACE ANNEALING.
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1600, (B6): : 1 - 2
[2] LASER ANNEALING.
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Semiconductor International, 1981, 4 (11) : 93 - 112
[3] CW LASER ANNEALING OF POLYCRYSTALLINE SILICON ON SIO2 ANDEFFECTS OF SUCCESSIVE FURNACE ANNEALING.
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INOUE, KAORU
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[4] The minima temperatures of annealing.
Hanriot
Lahure
COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES, 1914, 158 : 262 - 264
[5] Recrystallisation caused by annealing.
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[6] DIFFUSION, ION IMPLANTATION AND ANNEALING.
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1600, (06):
[7] MEASURING TECHNOLOGY IN CONTINUOUS ANNEALING.
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[8] CONTROLLED ATMOSPHERES - DECARBURISATION ANNEALING.
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FWP journal, 1983, 23 (11): : 17 - 34
[9] SALT BATH WIRE ANNEALING.
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Wire and Wire Products, 1972, 47 (11):
[10] PHOSPHORUS REDISTRIBUTION IN A WSi2/POLY-Si GATE STRUCTURE DURING FURNACE ANNEALING.
Torres, J.
Thomas, O.
Jourdain, D.
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Perio, A.
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Vide, les Couches Minces, 1987, 42 (236): : 87 - 90