Selective MOVPE of GaN and AlxGa1-xN with smooth vertical facets

被引：0
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作者：
Akasaka, Tetsuya [1 ]
Kobayashi, Yasuyuki [1 ]
Ando, Seigo [1 ]
Kobayashi, Naoki [1 ]
Kumagai, Masami [1 ]
机构：
[1] NTT Basic Research Lab, Kanagawa, Japan
来源：
Journal of Crystal Growth | 1998年 / 189-190卷
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页码：72 / 77
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