CONTROLLED PREPARATION OF GALLIUM ARSENIDE FOR TRANSFERRED ELECTRON MICROWAVE OSCILLATORS.

被引：0

作者：

Barry, B.E.

Hicks, H.G.B.

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来源：

| 1600年 / 47期

关键词：

GALLIUM ARSENIDE;

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摘要：

Recent advances in the preparation of epitaxial gallium arsenide by vapor and liquid techniques have yielded material that consistently meets the exacting requirements for Gunn effect oscillators. Both growth techniques can produce high quality material over a wide range of thickness. These advances are based on a more thorough understanding of the growth process and device material requirements, coupled with sophisticated materials assessment techniques.

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