Far-infrared reflectance spectra of heavily doped p-GaAs for various hole concentrations

被引：0

作者：

Fukasawa, Ryoichi ^{[1
]}

Wakaki, Moriaki ^{[1
]}

Ohta, Kimihiro ^{[1
]}

机构：

[1] JASCO Corp, Hachioji, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1992年 / 31卷 / 07期

关键词：

Far infrared spectra - Hole concentration;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We report far-infrared reflectance spectra of Be-doped p-type GaAs for hole concentrations between 3.5 × 1018 and 2.9 × 1019 cm-3. The spectral features of p-GaAs are quite different from the typical spectra of n-GaAs. The spectral shape analysis indicates that the free hole damping constant is about 8 times larger than that of n-GaAs.

引用

页码：2138 / 2139