Electron correlation effects at variable-range hopping in doped GaAs, CdTe, Ge and Si

被引：10
作者：
Rentzsch, Rolf
Ionov, A.N.
机构：
[1] Freie Universität Berlin, FB Physik, WE I, Arnimallee 14, 14195-Berlin, Germany
[2] A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
来源：
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties | 2001年 / 81卷 / 9 SPEC.期
关键词：
D O I：
10.1080/13642810110061457
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1065 / 1081
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