首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
Observation of miniband transport in GaAs/Al0.33Ga0.67As superlattices
被引:0
|
作者
:
机构
:
来源
:
|
1600年
/ 75期
关键词
:
D O I
:
暂无
中图分类号
:
学科分类号
:
摘要
:
引用
收藏
相关论文
共 50 条
[1]
OBSERVATION OF MINIBAND TRANSPORT IN GAAS/AL0.33GA0.67AS SUPERLATTICES
HUTCHINSON, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
Defence Research Agency, Worcestershire WR14 3PS, St. Andrews Road
HUTCHINSON, HJ
HIGGS, AW
论文数:
0
引用数:
0
h-index:
0
机构:
Defence Research Agency, Worcestershire WR14 3PS, St. Andrews Road
HIGGS, AW
HERBERT, DC
论文数:
0
引用数:
0
h-index:
0
机构:
Defence Research Agency, Worcestershire WR14 3PS, St. Andrews Road
HERBERT, DC
SMITH, GW
论文数:
0
引用数:
0
h-index:
0
机构:
Defence Research Agency, Worcestershire WR14 3PS, St. Andrews Road
SMITH, GW
JOURNAL OF APPLIED PHYSICS,
1994,
75
(01)
: 320
-
324
[2]
LOW-TEMPERATURE ELECTRON-TRANSPORT IN A ONE-SIDE MODULATION-DOPED AL0.33GA0.67AS/GAAS/AL0.33GA0.67AS SINGLE QUANTUM-WELL STRUCTURE
CHO, NM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089
UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089
CHO, NM
OGALE, SB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089
UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089
OGALE, SB
MADHUKAR, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089
UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089
MADHUKAR, A
APPLIED PHYSICS LETTERS,
1987,
51
(13)
: 1016
-
1018
[3]
Temporal evolution of the excitonic distribution function in GaAs/Al0.33Ga0.67As superlattices -: art. no. 153302
Shtrichman, I
论文数:
0
引用数:
0
h-index:
0
机构:
Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
Shtrichman, I
Ron, A
论文数:
0
引用数:
0
h-index:
0
机构:
Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
Ron, A
Gershoni, D
论文数:
0
引用数:
0
h-index:
0
机构:
Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
Gershoni, D
Ehrenfreund, E
论文数:
0
引用数:
0
h-index:
0
机构:
Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
Ehrenfreund, E
Maranowski, KD
论文数:
0
引用数:
0
h-index:
0
机构:
Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
Maranowski, KD
Gossard, AC
论文数:
0
引用数:
0
h-index:
0
机构:
Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
Gossard, AC
PHYSICAL REVIEW B,
2002,
65
(15)
: 1
-
4
[4]
Far infrared reflectivity of a GaAs/Al0.33Ga0.67As multiple quantum well structure
Nikolic, PM
论文数:
0
引用数:
0
h-index:
0
机构:
ARISTOTELIAN UNIV THESSALONIKI, GR-54006 THESSALONIKI, GREECE
Nikolic, PM
Ristovski, Z
论文数:
0
引用数:
0
h-index:
0
机构:
ARISTOTELIAN UNIV THESSALONIKI, GR-54006 THESSALONIKI, GREECE
Ristovski, Z
Duric, S
论文数:
0
引用数:
0
h-index:
0
机构:
ARISTOTELIAN UNIV THESSALONIKI, GR-54006 THESSALONIKI, GREECE
Duric, S
Blagojevic, V
论文数:
0
引用数:
0
h-index:
0
机构:
ARISTOTELIAN UNIV THESSALONIKI, GR-54006 THESSALONIKI, GREECE
Blagojevic, V
Dramicanin, MD
论文数:
0
引用数:
0
h-index:
0
机构:
ARISTOTELIAN UNIV THESSALONIKI, GR-54006 THESSALONIKI, GREECE
Dramicanin, MD
Siapkas, D
论文数:
0
引用数:
0
h-index:
0
机构:
ARISTOTELIAN UNIV THESSALONIKI, GR-54006 THESSALONIKI, GREECE
Siapkas, D
Zorba, TT
论文数:
0
引用数:
0
h-index:
0
机构:
ARISTOTELIAN UNIV THESSALONIKI, GR-54006 THESSALONIKI, GREECE
Zorba, TT
Henini, M
论文数:
0
引用数:
0
h-index:
0
机构:
ARISTOTELIAN UNIV THESSALONIKI, GR-54006 THESSALONIKI, GREECE
Henini, M
MICROELECTRONICS JOURNAL,
1996,
27
(01)
: 87
-
92
[5]
Enhanced electron density in two Si δ-doped Al0.33Ga0.67As/GaAs heterojunctions
Sfaxi, L
论文数:
0
引用数:
0
h-index:
0
机构:
Fac Sci Monastir, Dept Phys, Lab Phys Semicond, Monastir 5000, Tunisia
Fac Sci Monastir, Dept Phys, Lab Phys Semicond, Monastir 5000, Tunisia
Sfaxi, L
Bouzaïene, L
论文数:
0
引用数:
0
h-index:
0
机构:
Fac Sci Monastir, Dept Phys, Lab Phys Semicond, Monastir 5000, Tunisia
Fac Sci Monastir, Dept Phys, Lab Phys Semicond, Monastir 5000, Tunisia
Bouzaïene, L
Maaref, H
论文数:
0
引用数:
0
h-index:
0
机构:
Fac Sci Monastir, Dept Phys, Lab Phys Semicond, Monastir 5000, Tunisia
Fac Sci Monastir, Dept Phys, Lab Phys Semicond, Monastir 5000, Tunisia
Maaref, H
MICROELECTRONICS JOURNAL,
1999,
30
(08)
: 769
-
772
[6]
Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers
Spagnolo, V
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Bari, INFM, Dipartimento Interateno Fis, I-70126 Bari, Italy
Spagnolo, V
Troccoli, M
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Bari, INFM, Dipartimento Interateno Fis, I-70126 Bari, Italy
Troccoli, M
Scamarcio, G
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Bari, INFM, Dipartimento Interateno Fis, I-70126 Bari, Italy
Scamarcio, G
Becker, C
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Bari, INFM, Dipartimento Interateno Fis, I-70126 Bari, Italy
Becker, C
Glastre, G
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Bari, INFM, Dipartimento Interateno Fis, I-70126 Bari, Italy
Glastre, G
Sirtori, C
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Bari, INFM, Dipartimento Interateno Fis, I-70126 Bari, Italy
Sirtori, C
APPLIED PHYSICS LETTERS,
2001,
78
(09)
: 1177
-
1179
[7]
DELTA-DOPING OF GAAS AND AL0.33GA0.67AS WITH SN, SI AND BE - A COMPARATIVE-STUDY
HARRIS, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, Redhill
HARRIS, JJ
CLEGG, JB
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, Redhill
CLEGG, JB
BEALL, RB
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, Redhill
BEALL, RB
CASTAGNE, J
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, Redhill
CASTAGNE, J
WOODBRIDGE, K
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, Redhill
WOODBRIDGE, K
ROBERTS, C
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, Redhill
ROBERTS, C
JOURNAL OF CRYSTAL GROWTH,
1991,
111
(1-4)
: 239
-
245
[8]
A novel Al0.33Ga0.67As/In0.15Ga0.85As/GaAs quantum well Hall device grown on (111) GaAs
Sghaier, H.
论文数:
0
引用数:
0
h-index:
0
机构:
Fac Sci Monastir, Lab Microoptoelect & Nanostruct Monastir, Ave Environm, Monastir 5000, Tunisia
Fac Sci Monastir, Lab Microoptoelect & Nanostruct Monastir, Ave Environm, Monastir 5000, Tunisia
Sghaier, H.
Bouzaiene, L.
论文数:
0
引用数:
0
h-index:
0
机构:
Fac Sci Monastir, Lab Microoptoelect & Nanostruct Monastir, Ave Environm, Monastir 5000, Tunisia
Bouzaiene, L.
Sfaxi, L.
论文数:
0
引用数:
0
h-index:
0
机构:
Fac Sci Monastir, Lab Microoptoelect & Nanostruct Monastir, Ave Environm, Monastir 5000, Tunisia
Sfaxi, L.
Maaref, H.
论文数:
0
引用数:
0
h-index:
0
机构:
Fac Sci Monastir, Lab Microoptoelect & Nanostruct Monastir, Ave Environm, Monastir 5000, Tunisia
Maaref, H.
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS,
2012,
15
(01)
: 72
-
76
[9]
Radiation intensity fluctuations of an exciton Bose condensate in GaAs/Al0.33Ga0.67As double quantum wells
Kuz'min, R. V.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Kuz'min, R. V.
Krivolapchuk, V. V.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Krivolapchuk, V. V.
Moskalenko, E. S.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Moskalenko, E. S.
Mezdrogina, M. M.
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
Mezdrogina, M. M.
PHYSICS OF THE SOLID STATE,
2010,
52
(06)
: 1260
-
1266
[10]
Radiation intensity fluctuations of an exciton Bose condensate in GaAs/Al0.33Ga0.67As double quantum wells
R. V. Kuz’min
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Academy of Sciences,Ioffe Physical
R. V. Kuz’min
V. V. Krivolapchuk
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Academy of Sciences,Ioffe Physical
V. V. Krivolapchuk
E. S. Moskalenko
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Academy of Sciences,Ioffe Physical
E. S. Moskalenko
M. M. Mezdrogina
论文数:
0
引用数:
0
h-index:
0
机构:
Russian Academy of Sciences,Ioffe Physical
M. M. Mezdrogina
Physics of the Solid State,
2010,
52
: 1260
-
1266
←
1
2
3
4
5
→