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- [2] ON THE ORIGIN OF DEFECTS IN SEMI-INSULATING LEC-GROWN GAAS SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 499 - 504
- [3] Defect generation by proton irradiation of semi-insulating LEC GaAs MICROSTRUCTURAL PROCESSES IN IRRADIATED MATERIALS, 1999, 540 : 73 - 78
- [6] LATTICE BENDING IN LEC-GROWN SEMI-INSULATING GAAS WAFERS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1983, 22 (10): : 1567 - 1569
- [8] STRIATIONS IN UNDOPED SEMI-INSULATING LEC GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (01): : L65 - L68
- [9] CHARACTERISTICS OF UNDOPED SEMI-INSULATING GaAs CRYSTAL GROWN BY LEC TECHNIQUE. 1987, 1 (01): : 35 - 40
- [10] GROWTH OF SEMI-INSULATING GaAs SINGLE CRYSTAL BY LEC METHOD. Reports of the Electrical Communication Laboratory, 1985, 33 (01): : 146 - 155