Metal adsorption effect on tunneling spectra in scanning tunneling spectroscopy of InAs quantum dots on GaAs(001)

被引：0
|
作者：
Yamauchi, Takeshi [1 ]
Ohyama, Yasuaki [2 ]
Tabuchi, Masao [2 ]
Nakamura, Arao [1 ,2 ]
机构：
[1] CREST, Japan Sci. and Technol. Corp. (JST), Shibuya-ku 150-0002, Japan
[2] Department of Applied Physics, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 7 A期
关键词：
Indium arsenide - Tip-induced band bending - Wetting layer;
D O I：
10.1143/jjap.42.4495
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：4495 / 4498
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