Impurity-free vacancy diffusion technique for InGaAsP/InP multiple quantum well laser structure

被引：4

作者：

Han, De-Jun ^{[1
,2
]}

Niu, Jia-Sheng ^{[1
,2
]}

Zhu, Hong-Liang ^{[3
]}

Zhu, Hong-Qing ^{[1
,2
]}

Zhuang, Wan-Ru ^{[3
]}

机构：

[1] Key Lab. Univ. Radiat. Beam T., Inst. of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875, China

[2] Beijing Radiation Center, Beijing 100875, China

[3] Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

来源：

| 2001年 / Allerton Press Inc.卷 / 18期

关键词：

Band-gap tuning - Impurity free vacancy diffusion - InGaAsP/InP - Intrinsic defects - Laser structures - Multiple quantum well laser - Plasma bombardment - Sample surface - Surface decomposition;

D O I：

10.1088/0256-307X/18/1/335

中图分类号：

学科分类号：

摘要：

引用