FABRICATION OF CHALCOGENIDE AMORPHOUS SEMICONDUCTOR DIODES USING LOW TEMPERATURE THERMAL DIFFUSION TECHNIQUES.

被引：0

作者：

Okano, Shuichi ^{[1
]}

Yamakawa, Hiroshi ^{[1
]}

Suzuki, Masakuni ^{[1
]}

Hiraki, Akio ^{[1
]}

机构：

[1] Kanazawa Univ, Kanazawa, Jpn, Kanazawa Univ, Kanazawa, Jpn

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1987年 / 26卷 / 07期

关键词：

CADMIUM AND ALLOYS - Diffusion - SEMICONDUCTOR MATERIALS - Amorphous;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Chalcogenide amorphous semiconductor diodes were fabricated using low-temperature thermal diffusion techniques. Anomalous diffusion profiles of Cd ions were observed by secondary ion mass spectroscopy. Two opposite potential barriers were formed owing to a peculiar diffusion profile of Cd; thus, the rectifying effects became poor. A high density of vacancies and dislocation-like defects, especially in the surface region, is considered to cause anomalous diffusion profiles of Cd ions.

引用

页码：1102 / 1106