SURFACE CHARGE COMPENSATION IN AN ION-ETCHED INSULATOR.

被引：0

作者：

Kanter, B.Z. ^{[1
]}

Kozhukhov, A.V. ^{[1
]}

机构：

[1] Acad of Sciences of the USSR,, Semiconductor Physics Inst,, Novosibirsk, USSR, Acad of Sciences of the USSR, Semiconductor Physics Inst, Novosibirsk, USSR

来源：

Instruments and experimental techniques New York | 1984年 / 27卷 / 4 pt 2期

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D O I：

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摘要：

引用

页码：937 / 939

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