High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy

被引：0
|
作者：
CEA/Grenoble, Grenoble, France [1 ]
机构：
来源：
Appl Phys Lett | / 24卷 / 3610-3612期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates
    Novikova, SV
    Zhao, LX
    Winser, AJ
    Kappers, M
    Barnard, JS
    Harrison, I
    Humphreys, C
    Foxon, CT
    JOURNAL OF CRYSTAL GROWTH, 2003, 256 (3-4) : 237 - 242
  • [22] Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy
    Heo, Junseok
    Zhou, Zifan
    Guo, Wei
    Ooi, Boon S.
    Bhattacharya, Pallab
    APPLIED PHYSICS LETTERS, 2013, 103 (18)
  • [23] HIGH REFLECTIVITY 1.55 MU-M (AL)GASB/ALSB BRAGG MIRROR GROWN BY MOLECULAR-BEAM EPITAXY
    LAMBERT, B
    TOUDIC, Y
    ROUILLARD, Y
    BAUDET, M
    GUENAIS, B
    DEVEAUD, B
    VALIENTE, I
    SIMON, JC
    APPLIED PHYSICS LETTERS, 1994, 64 (06) : 690 - 691
  • [24] Molecular beam epitaxial growth of high-reflectivity and broad-bandwidth ZnTe/GaSb distributed Bragg reflectors
    Fan, Jin
    Liu, Xinyu
    Ouyang, Lu
    Pimpinella, Richard E.
    Dobrowolska, Margaret
    Furdyna, Jacek K.
    Smith, David J.
    Zhang, Yong-Hang
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2013, 31 (03):
  • [25] Growth of II-VI Bragg mirrors by molecular beam epitaxy
    Rakennus, K
    Uusimaa, P
    Nappi, J
    Salokatve, A
    Pessa, M
    Aherne, T
    Doran, JP
    OGorman, J
    Hegarty, J
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 628 - 631
  • [26] Incorporation of Mg in GaN grown by molecular beam epitaxy
    Univ of Nottingham, Nottingham, United Kingdom
    J Cryst Growth, 1-2 (7-11):
  • [27] Properties of GaN Nanowires Grown by Molecular Beam Epitaxy
    Geelhaar, Lutz
    Cheze, Caroline
    Jenichen, Bernd
    Brandt, Oliver
    Pfueller, Carsten
    Muench, Steffen
    Rothemund, Ralph
    Reitzenstein, Stephan
    Forchel, Alfred
    Kehagias, Thomas
    Komninou, Philomela
    Dimitrakopulos, George P.
    Karakostas, Theodoros
    Lari, Leonardo
    Chalker, Paul R.
    Gass, Mhairi H.
    Riechert, Henning
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (04) : 878 - 888
  • [28] GaN grown by molecular beam epitaxy with antimony as surfactant
    Pei, CW
    Turk, B
    Héroux, JB
    Wang, WI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04): : 1426 - 1428
  • [29] ScAlInN/GaN heterostructures grown by molecular beam epitaxy
    Ye, Haotian
    Wang, Rui
    Yang, Liuyun
    Wang, Jinlin
    Wang, Tao
    Feng, Ran
    Xu, Xifan
    Lee, Wonseok
    Wang, Ping
    Wang, Xinqiang
    APPLIED PHYSICS LETTERS, 2024, 125 (12)
  • [30] Incorporation of Mg in GaN grown by molecular beam epitaxy
    Orton, JW
    Foxon, CT
    Cheng, TS
    Hooper, SE
    Novikov, SV
    Ber, BY
    Kudriavtsev, YA
    JOURNAL OF CRYSTAL GROWTH, 1999, 197 (1-2) : 7 - 11
12345