STATE OF OXYGEN AND ITS INTERACTION WITH SILICON IMPURITY IN GaAs.

被引：0

作者：

Reznitchenko, M.F. ^{[1
]}

Borisova, L.A. ^{[1
]}

Saprikin, A.I. ^{[1
]}

机构：

[1] Inst of Inorganic Chemistry, Novosibirsk, USSR, Inst of Inorganic Chemistry, Novosibirsk, USSR

来源：

Materials Research Bulletin | 1986年 / 21卷 / 01期

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D O I：

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学科分类号：

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：77 / 84

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