Current voltage characteristics of high-voltage 4H silicon carbide diodes

被引：1
|
作者：
Zimmermann, Uwe [1 ]
Hallén, Anders [1 ]
Breitholtz, Bo [1 ,2 ]
机构：
[1] Department of Electronics, Royal Institute of Technology, SE-16440 Stockholm, Sweden
[2] ABB Corporate Research, SE-721 78 Vasteras, Sweden
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Current density - Current voltage characteristics - Electric breakdown of solids - Electric contacts - Electric resistance measurement - Electroluminescence - Leakage currents - Semiconductor device models - Silicon carbide - Substrates;
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摘要：
High-voltage 4H silicon carbide diodes with breakdown voltages above 3500 V were processed and characterized by using different techniques. Measurement results of the electrical properties of p+-ν-n and Schottky high-voltage diodes are presented. The achieved Schottky barrier height at room temperature was estimated to be Φb = 1.17 eV from IV measurements. The p+-ν-n diodes showed negligible leakage current densities of Jr&le0.5 μA cm-2 at 1000 V reverse bias. We also present a simple model to quantitatively characterize excess currents observed under low forward biases in different diode structures.
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