Reactive ion etching of tungsten in SF6-N2 plasma

被引：0
|
作者：
机构：
[1] Mutsukura, Nobuki
[2] Turban, Guy
来源：
Mutsukura, Nobuki | 1600年 / 137期
关键词：
Mass Spectrometry - Reactive Ion Etching - Sulfur Hexafluoride Gas - X-ray Photoelectron Spectroscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] TiN etching and its effects on tungsten etching in SF6/Ar helicon plasma
    Choi, CJ
    Seol, YS
    Baik, KH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3A): : 801 - 806
  • [32] TiN etching and its effects on tungsten etching in SF6/Ar helicon plasma
    Hyundai Electronics Industries Co, Ltd, Ichon, Korea, Republic of
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 3 A (801-806):
  • [33] Surface modelling of reactive ion etching of silicon-germanium alloys in a SF6 plasma
    Peignon, MC
    Turban, G
    Charles, C
    Boswell, RW
    SURFACE & COATINGS TECHNOLOGY, 1997, 97 (1-3): : 465 - 468
  • [34] REACTIVE ION ETCHING OF TUNGSTEN FOR INTERCONNECTIONS
    LAPORTE, P
    LYAN, P
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1989, 44 (247): : 297 - 309
  • [35] ANISOTROPY AND KINETICS OF THE ETCHING OF TUNGSTEN IN SF6 MULTIPOLAR MICROWAVE PLASMA
    DURANDET, A
    ARNAL, Y
    PELLETIER, J
    POMOT, C
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) : 2298 - 2302
  • [36] TUNGSTEN ETCHING MECHANISMS IN LOW-PRESSURE SF6 PLASMA
    PETRI, R
    HENRY, D
    SADEGHI, N
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) : 2644 - 2651
  • [37] Fluid Model Used for Simulating Streamer Breakdown in SF6 and SF6-N2 Mixtures
    Ilas, Tudor Alexandru
    Cotet, Tudor
    Ursan, George-Andrei
    Ursan, Maria
    PROCEEDINGS OF THE 2016 INTERNATIONAL CONFERENCE AND EXPOSITION ON ELECTRICAL AND POWER ENGINEERING (EPE 2016), 2016, : 47 - 50
  • [38] Reactive Ion Etching of a WSi2 plus Polycrystalline Si Polysilicide Grid in an SF6 Plasma.
    Henry, D.
    Ranta, M.
    Pons, M.
    Kirtsch, J.
    1600, (38):
  • [39] Characterization of reactive ion etching of benzocyclobutente in SF6/O2 plasmas
    Chen, Qianwen
    Wang, Zheyao
    Tan, Zhiming
    Liu, Litian
    MICROELECTRONIC ENGINEERING, 2010, 87 (10) : 1945 - 1950
  • [40] A MECHANISTIC STUDY OF SF6/O2 REACTIVE ION ETCHING OF MOLYBDENUM
    PARK, SJ
    SUN, CP
    PURTELL, RJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1372 - 1373
12345