Calculation of electronic states of GaN, AlN and BN(110) abnormal surface relaxation

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Zhengzhou Daxue Xuebao/Journal of Zhengzhou University | 2000年 / 32卷 / 01期
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Based on the tight binding scattering theoretical method, the electronic states of abnormal surface relaxation GaN, AlN and BN(110) surface are calculated. The influences of the relaxation on the surface electronic states are discussed and the results are compared with those of GaAs(110).
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页码：42 / 47
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