GROWTH MECHANISM OF THIN OXIDE FILMS ON Si.

被引：0
作者：
Robertson, John [1 ]
机构：
[1] Central Electricity Research Lab, Leatherhead, Engl, Central Electricity Research Lab, Leatherhead, Engl
来源：
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1986年 / 55卷 / 06期
关键词：
Compendex;
D O I：
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学科分类号：
摘要：
46
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收藏
页码：673 / 684
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