GROWTH MECHANISM OF THIN OXIDE FILMS ON Si.

被引：0
|
作者：
Robertson, John [1 ]
机构：
[1] Central Electricity Research Lab, Leatherhead, Engl, Central Electricity Research Lab, Leatherhead, Engl
来源：
Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1986年 / 55卷 / 06期
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摘要：
46
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页码：673 / 684
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