Light absorption in ion-implanted gallium arsenide

被引：0
|
作者：
Danilov, Yu.A. [1 ]
机构：
[1] Nizhnii Novgorod State Univ, Nizhnii Novgorod, Russia
来源：
Physics, chemistry and mechanics of surfaces | 1995年 / 11卷 / 05期
关键词：
12;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：524 / 527
相关论文
共 50 条
  • [1] ION-IMPLANTED NITROGEN IN GALLIUM-ARSENIDE
    KACHARE, AH
    KAHAN, A
    EULER, FK
    WHATLEY, TA
    SPITZER, WG
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4393 - 4399
  • [2] SYSTEMATICS OF THE ANNEALING OF ION-IMPLANTED GALLIUM-ARSENIDE
    ANDERSON, CL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C384 - C384
  • [3] ION-IMPLANTED GALLIUM-ARSENIDE-PHOSPHIDE SURFACES
    ARNOLDUSSEN, TC
    GREENSTEIN, E
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) : 1102 - 1106
  • [4] LASER ANNEALING OF ION-IMPLANTED GALLIUM-ARSENIDE
    OLSON, GL
    ANDERSON, CL
    DUNLAP, HL
    HESS, LD
    MCFARLANE, RA
    PEPPER, DM
    VAIDYANATHAN, KV
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C362 - C362
  • [5] DIFFUSION OF ZINC INTO ION-IMPLANTED GALLIUM-ARSENIDE
    HOUGHTON, AJN
    TUCK, B
    SOLID-STATE ELECTRONICS, 1982, 25 (06) : 441 - 448
  • [6] A computational study of ion-implanted beryllium diffusion in gallium arsenide
    Koumetz, S. D.
    Pesant, J. -C.
    Dubois, C.
    COMPUTATIONAL MATERIALS SCIENCE, 2008, 43 (04) : 902 - 908
  • [7] SOLID SOLUBILITY LIMITS IN ION-IMPLANTED GALLIUM-ARSENIDE
    ORRMANROSSITER, KG
    JOHNSON, ST
    WILLIAMS, JS
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 448 - 452
  • [8] INFRARED LOCALIZED-VIBRATIONAL-MODE ABSORPTION OF ION-IMPLANTED ALUMINUM AND PHOSPHOROUS IN GALLIUM ARSENIDE
    SKOLNIK, LH
    SPITZER, WG
    KAHAN, A
    HUNSPERG.RG
    JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5223 - &
  • [9] ION-IMPLANTED OPTICAL WAVE-GUIDES IN GALLIUM-ARSENIDE
    MENTZER, MA
    HUNSPERGER, RG
    SRIRAM, S
    BARTKO, J
    WLODAWSKI, MS
    ZAVADA, JM
    JENKINSON, HA
    OPTICAL ENGINEERING, 1985, 24 (02) : 225 - 229
  • [10] INFRARED OPTICAL-PROPERTIES OF ION-IMPLANTED GALLIUM-ARSENIDE
    EULER, F
    KACHARE, AH
    SPITZER, WG
    JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) : 865 - 865
12345