This paper deals with topics related to extracting the maximum information from signals obtained by charge accumulation (CA), i. e. , identifying defects in practical cases and researching fundamental dislocation topics by CA or EBIC spectroscopy. The topics discussed are the following: dislocation depth and EBIC contrast, defect identification and charge accumulation EBIC spectroscopy, temperature dependence of dislocation EBIC contrast and defects in multilayer epitaxial structures.