Simultaneous measurement of size and depth of each defect in a silicon wafer using light scattering at two wavelengths: Principle, limitation and applications of optical shallow defect analyzer

被引：0

作者：

Takeda, Kazuo ^{[2
]}

Isomae, Seiichi ^{[2
]}

Ohkura, Makoto ^{[2
]}

Maeshima, Muneo ^{[1
]}

Matsui, Shigeru ^{[1
]}

机构：

[1] Instrument Div., Hitachi Ltd., Hitachinaka 882, Japan

[2] Central Research Lab., Hitachi, Ltd., Kokubunji, Tokyo 185, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 6 A期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Silicon wafers

引用

页码：3776 / 3783