Silicides for integrated circuits: TiSi2 and CoSi2

被引：0

作者：

Maex, Karen ^{[1
]}

机构：

[1] IMEC, Leuven, Belgium

来源：

Materials Science and Engineering R: Reports | 1993年 / 11卷 / 2-3期

关键词：

Silicon compounds - Thermodynamics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Silicides have been a topic of intensive research for more than a decade. The driving force for these investigations has certainly been the interesting materials aspects of the silicides and their applications in integrated circuits. The advantages of easy formability and low resistivity for both CoSi2 and TiSi2 have led to an intensive use of these silicides in self-aligned processes for simultaneous silicidation of source, drain and gate.

引用

页码：53 / 153