HOLE COLOR CENTERS AND THEIR PROPERTIES IN KCl CRYSTALS IRRADIATED WITH A HIGH-CURRENT PULSED ELECTRON BEAM.
被引:0
作者:
Annenkov, Yu.M.
论文数: 0引用数: 0
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机构:
S. M. Kirov Tomsk Polytechnic Inst, Tomsk, USSR, S. M. Kirov Tomsk Polytechnic Inst, Tomsk, USSRS. M. Kirov Tomsk Polytechnic Inst, Tomsk, USSR, S. M. Kirov Tomsk Polytechnic Inst, Tomsk, USSR
Annenkov, Yu.M.
[1
]
Stolyarenko, V.F.
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机构:
S. M. Kirov Tomsk Polytechnic Inst, Tomsk, USSR, S. M. Kirov Tomsk Polytechnic Inst, Tomsk, USSRS. M. Kirov Tomsk Polytechnic Inst, Tomsk, USSR, S. M. Kirov Tomsk Polytechnic Inst, Tomsk, USSR
Stolyarenko, V.F.
[1
]
Frangul'yan, T.S.
论文数: 0引用数: 0
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机构:
S. M. Kirov Tomsk Polytechnic Inst, Tomsk, USSR, S. M. Kirov Tomsk Polytechnic Inst, Tomsk, USSRS. M. Kirov Tomsk Polytechnic Inst, Tomsk, USSR, S. M. Kirov Tomsk Polytechnic Inst, Tomsk, USSR
Frangul'yan, T.S.
[1
]
机构:
[1] S. M. Kirov Tomsk Polytechnic Inst, Tomsk, USSR, S. M. Kirov Tomsk Polytechnic Inst, Tomsk, USSR
来源:
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1985年
/
28期
关键词:
CRYSTALS - Color Centers - ELECTRON BEAMS;
D O I:
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学科分类号:
摘要:
The authors have established what influence pulsed electron bombardment, as compared to x-ray irradiation, has on the state and properties of defects that are responsible for V//2 and V//3 absorption bands. For this purpose, using thermally stimulated luminescence (TSL) they have studied the optical stability of hole centers with respect to their destruction in an electron recombination process as well as their thermal stability.