Global simulation of silicon crystal Czochralski growth. I. Characteristics of heat transfer and fluid flow

被引：0

作者：

Li, Yourong ^{[1
]}

Ruan, Dengfang ^{[1
]}

Peng, Lan ^{[1
]}

Wu, Shuangying ^{[1
]}

机构：

[1] Coll. of Power Eng., Chongqing Univ., Chongqing 400044, China

来源：

Cailiao Yanjiu Xuebao/Chinese Journal of Materials Research | 2004年 / 18卷 / 02期

关键词：

Computer simulation - Finite element method - Flow of fluids - Flow patterns - Heat transfer - Temperature distribution;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In order to understand the basic characteristics of heat transfer and fluid flow in Czochralski (Cz) furnace for the single-crystal growth of silicon, a set of global analyses for momentum and heat transfer in small Cz furnaces was carried out using the finite-element method. It was assumed that the flow was axisymmetric stable laminar in both the melt and the gas, the melt was incompressible and a constant temperature was imposed on the outer wall of Cz furnace. The results indicate that the melt flow pattern and the global heat transfer characteristics are strongly dependent on the Marangoni effect and gas flow near the free surface. A gas guide, placed between the crucible and the crystal, reduces the heater power and changes the melt flow pattern.

引用

页码：212 / 218