Effect of N2 addition on aluminum alloy etching by electron cyclotron resonance reactive ion etching and magnetically enhanced reactive ion etching

被引：0
作者：
Kusumi, Yoshihiro [1 ]
Fujiwara, Nobuo [1 ]
Matsumoto, Junko [1 ]
Yoneda, Masahiro [1 ]
机构：
[1] Mitsubishi Electric Corp, Hyogo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 4 B期
关键词：
Reactive ion etching;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2147 / 2151
相关论文
共 50 条
  • [41] Surface smoothing of diamond membranes by reactive ion etching process
    Vivensang, C
    FerlazzoManin, L
    Ravet, MF
    Turban, G
    Rousseaux, F
    Gicquel, A
    DIAMOND AND RELATED MATERIALS, 1996, 5 (6-8) : 840 - 844
  • [42] The Effect of Inductively-Coupled-Plasma Reactive Ion Etching Power on the Etching Rate and the Surface Roughness of a Sapphire Substrate
    Chang, Chun-Ming
    Shiao, Ming-Hua
    Chiang, Donyau
    Yang, Chin-Tien
    Cheng, Chung-Ta
    Hsueh, Wen-Jeng
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2014, 14 (10) : 8074 - 8078
  • [43] Through wafer via hole by reactive ion etching of GaAs
    Chen, YW
    Tan, CL
    Ooi, BS
    Radhakrishnan, K
    Ng, GI
    OPTOELECTRONIC INTERCONNECTS, INTEGRATED CIRCUITS, AND PACKAGING, 2002, 4652 : 120 - 127
  • [44] Reactive ion etching of zinc oxide using methane and hydrogen
    Guo, Qixin
    Uesugi, Nozomu
    Tanaka, Tooru
    Nishio, Mitsuhiro
    Ogawa, Hiroshi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (11): : 8597 - 8599
  • [45] Reactive Ion Etching of CVD diamond films for MEMS applications
    Ding, GF
    Zhao, XL
    Yu, AB
    Yang, CS
    Cai, BC
    Yao, X
    MICROMACHINING AND MICROFABRICATION, 2000, 4230 : 224 - 230
  • [46] Smooth and high-rate reactive ion etching of diamond
    Ando, Y
    Nishibayashi, Y
    Kobashi, K
    Hirao, T
    Oura, K
    DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 824 - 827
  • [47] Polishing method for polyimide membranes based on reactive ion etching
    Yang Z.
    Jin Z.-W.
    Chen J.-J.
    Rao X.-H.
    Yin S.-Y.
    Wu P.
    Guangxue Jingmi Gongcheng/Optics and Precision Engineering, 2019, 27 (02): : 302 - 308
  • [48] Reactive ion etching of diamond using microwave assisted plasmas
    Silva, F
    Sussmann, RS
    Bénédic, F
    Gicquel, A
    DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) : 369 - 373
  • [49] RF matching of a reactive ion etching (RIE) plasma reactor
    Gesche, R
    FREQUENZ, 2005, 59 (3-4) : 73 - 76
  • [50] The effect of hydrogen as an additive in reactive ion etching of GaAs for obtaining polished surface
    Dultsev, F. N.
    Nenasheva, L. A.
    APPLIED SURFACE SCIENCE, 2006, 253 (03) : 1287 - 1290
12345