Effect of N2 addition on aluminum alloy etching by electron cyclotron resonance reactive ion etching and magnetically enhanced reactive ion etching

被引：0
作者：
Kusumi, Yoshihiro [1 ]
Fujiwara, Nobuo [1 ]
Matsumoto, Junko [1 ]
Yoneda, Masahiro [1 ]
机构：
[1] Mitsubishi Electric Corp, Hyogo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 4 B期
关键词：
Reactive ion etching;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2147 / 2151
相关论文
共 50 条
  • [21] Anisotropic Si reactive ion etching in fluorinated plasma
    Malinin, A
    Majamaa, T
    Hovinen, A
    MICROELECTRONIC ENGINEERING, 1998, 43-4 : 641 - 645
  • [22] Change in surface morphology of polytetrafluoroethylene by reactive ion etching
    Takahashi, Tomohiro
    Hirano, Yuki
    Takasawa, Yuya
    Gowa, Tomoko
    Fukutake, Naoyuki
    Oshima, Akihiro
    Tagawa, Seiichi
    Washio, Masakazu
    RADIATION PHYSICS AND CHEMISTRY, 2011, 80 (02) : 253 - 256
  • [23] Transferring resist microlenses into silicon by reactive ion etching
    Eisner, M
    Schwider, J
    OPTICAL ENGINEERING, 1996, 35 (10) : 2979 - 2982
  • [24] Optimization of reactive ion etching processes using desirability
    Brabender, Stephan
    Kallis, Klaus T.
    Keller, Lars O.
    Poloczek, Remigius R.
    Fiedler, Horst L.
    MICROELECTRONIC ENGINEERING, 2010, 87 (5-8) : 1413 - 1415
  • [25] ROLE OF FLUORINE IN REACTIVE ION ETCHING OF SILICON DIOXIDE
    IKEGAMI, N
    MIYAKAWA, Y
    HASHIMOTO, J
    OZAWA, N
    KANAMORI, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B): : 6088 - 6094
  • [26] Nanometre scale reactive ion etching of GaN epilayers
    Coquillat, D
    Murad, SK
    Ribayrol, A
    Smith, CJM
    De La Rue, RM
    Wilkinson, CDW
    Briot, O
    Aulombard, RL
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1403 - 1406
  • [27] CORROSION STUDY OF AN AL-CU ALLOY EXPOSED TO REACTIVE ION ETCHING
    BRUSIC, V
    FRANKEL, GS
    HU, CK
    PLECHATY, MM
    RUSH, BM
    CORROSION, 1991, 47 (01) : 35 - 40
  • [28] Reactive ion etching of dielectrics and silicon for photovoltaic applications
    Deenapanray, Prakash N. K.
    Athukorala, C. S.
    Macdonald, Daniel
    Jellett, W. E.
    Franklin, E.
    Everett, V. E.
    Weber, K. J.
    Blakers, A. W.
    PROGRESS IN PHOTOVOLTAICS, 2006, 14 (07): : 603 - 614
  • [29] Luminescent porous silicon prepared by reactive ion etching
    Karbassian, Farshid
    Rajabali, Shima
    Chimeh, Abbas
    Mohajerzadeh, Shams
    Asl-Soleimani, Ebrahim
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (38)
  • [30] Reactive ion etching of Si1-xGex alloy with hydrogen bromide
    Guo, L
    Li, KC
    Liu, DG
    Ou, YH
    Zhang, J
    Yi, Q
    Xu, SL
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 801 - 804
12345